Numerical study of quantum transport in carbon nanotube transistors
نویسندگان
چکیده
A deeper understanding of quantum effects in nano-electronic devices helps to improve the functionality and to develop new device types. The performance of carbon nanotube (CNT) field-effect transistor is studied using the non-equilibrium Green’s function (NEGF) formalism. The effects of elastic and inelastic scattering and the impact of parameters, such as electron–phonon coupling strength and phonon energy, on the device performance are analyzed. © 2007 IMACS. Published by Elsevier B.V. All rights reserved. PACS: 61.46.Fg; 85.35.Kt; 63.20.Kr
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ورودعنوان ژورنال:
- Mathematics and Computers in Simulation
دوره 79 شماره
صفحات -
تاریخ انتشار 2008